Part Number : 2SK3570
Function : N-Channel Power MOSFET
Package : TO-220AB Type
Manufacturers : Renesas Electronics
Image and Pinouts :
Description :
The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features :
1. 4.5V drive available.
2. Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)
3. Low gate charge : QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
4. Built-in gate protection diode
5. Surface mount device available
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 20 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 48 A
4. Total Power Dissipation : Pd = 1.5 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
2SK3570 Datasheet PDF Download
Other data sheets within the file : 2SK3570-S, 2SK3570-Z, 2SK3570-ZK, K3570