Part Number: 2SK3570
Function: N-Channel Power MOSFET
Package: TO-220AB Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description:
The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features:
1. 4.5V drive available.
2. Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)
3. Low gate charge : QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
4. Built-in gate protection diode
5. Surface mount device available
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 20 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 48 A
4. Total Power Dissipation: Pd = 1.5 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
2SK3570 Datasheet PDF Download
Other data sheets are available within the file: 2SK3570S, 2SK3570Z, 2SK3570ZK, K3570