Part Number : 30J324, GT30J324
Function : 600V, IGBT
Package : TO-3P Type
Manufactures : Toshiba Semiconductor
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Description :
GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss: Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) · Low saturation voltage: VCE (sat) = 2.0 V (typ.) · FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 30 60 30 60 170 150 −55 to 150 Unit V V A A W °C °C Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.735 1.90 Unit °C/W °C/W Equivalent Circuit Collector Gate Emitter JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) 1 2002-04-19 GT30J324 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Turn-on time Switching time Turn-off delay time Fall time Turn-off time Switching loss Turn-on switching loss Turn-off switching loss Peak forward voltage Reverse recovery time IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 3 mA, VCE = 5 V IC = 30 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 30 A VGG = +15 V, RG = 24 Ω (Note 1) (Note 2) ― ― 3.5 ― ― ― ― ― ― ― ― ― Eoff VF IF = 30 A, VGE = 0 trr IF = 30 A, di/dt = −100 A/µs ― ― ― Note 1: Switching time measurement circuit and input/output waveforms Typ. Max ― ― ― 2.0 4650 0.09 ±500 1.0 6.5 2.45 ― ― 0.07 ― 0.24 0.30 ― ― 0.05 ― 0.43 ― 1.00 ― 0.80 ― 60 ― 3.8 ― Unit nA mA V V pF µs mJ V ns -VGE IC RG L VCC VCE VGE 0 90% IC 90% 0 VCE 10% td (off) tf toff 10% 10% 90% 10% td (on) tr ton 10% Note 2: Switching loss measurement waveforms VGE 0 90% 10% IC 0 VCE Eoff 5% Eon 2 2002-04-19 Collector current IC (A) 60 Common emitter 50 Tc = 25°C IC – VCE 20 15 10 40 9 30 20 VGE = 8 V 10 0 012345 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) GT30J324 VCE – VGE 20 Common emitter Tc = −40°C 16 12 8 60 30 4 IC = 10 A 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) VCE – VGE 20 Common emitter Tc = 25°C 16 12 8 30 60 4 IC = 10 A 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) VCE – VGE 20 Common emitter Tc = 125°C 16 12 8 30 60 4 IC = 10 A 0 0 4 8 12 […]
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