30J324 PDF – 600V, 30A, IGBT, GT30J324 ( Datasheet )

Part Number : 30J324, GT30J324

Function : 600V, 30A, N-Channel, IGBT ( Insulated Gate Bipolar Transistor )

Package : TO-3P Type

Manufactures : Toshiba Semiconductor

Images :

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30J324 image

Description :

The 30J324 is Silicon N Channel IGBT.

Applications :

1. High Power Switching

2. Fast Switching

Features :

1. The 4th generation

2. Enhancement-mode

3. Fast switching (FS): Operating frequency up to 50 kHz (reference)

(1) High speed: tf = 0.05 µs (typ.)
(2) Low switching loss: Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.)

4. Low saturation voltage: VCE (sat) = 2.0 V (typ.)

5. FRD included between emitter and collector

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 600 V

2. Gate to emitter voltage : Vges = ± 20 V

3. Collector current : Ic = 30 A

4. Collector dissipation : Pc = 170 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

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30J324 Datasheet