30N45 – N-Channel Enhancement Mode MFET

Part Number : 30N45

Function : N-Channel Enhancement Mode MFET

Manufactures : IXYS

Images :

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30N45 image

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pinout

Description :

Preliminary Data Sheet MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH 30N45 450 V IXTH 30N50 500 V ID25 RDS(on) 30 A 0.16 Ω 30 A 0.17 Ω TO-247 AD Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 30N45 30N50 30N45 30N50 450 500 450 500 ±20 ±30 TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 30 120 360 -55 … +150 150 -55 … +150 V V V V V V A A W °C °C °C 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 °C 1.13/10 Nm/lb.in. 6g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 5 mA 30N50 30N45 BV temperature coefficient DSS VDS = VGS, ID = 250µA V temperature coefficient GS(th) VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS V =0V GS TJ = 25°C T J = 125°C V = 10 V, I = 0.5 I GS D D25 30N50 30N45 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 500 450 .087 2 -0.25 V V %/k 4V %/k ±100 nA 200 µA 3 mA 0.17 0.16 Ω Ω TO-247 SMD ( …S ) D (TAB) G E C (TAB) G = Gate, D = Drain, S = Source, TAB = Drain *Add suffix letter “S” for TO-247 SMD package option (EX:IXTH30N50S) Features • International standard package JEDEC TO-247 AD • Low R DS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode power supplies • Motor control • Uninterruptible Power Supplies (UPS) • DC choppers Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density © 1997 IXYS All rights reserved 94569D(5/97) IXTH30N45 IXTH30N50 Symbol gfs Ciss C oss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 0.5 • ID25, pulse test V = 0 V, V = 25 V, f = 1 MHz GS DS 18 28 5680 635 240 VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 RG = 1 Ω, (External) 35 42 110 26 S pF pF pF ns ns ns ns VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 227 29 110 nC nC nC 0.35 K/W 0.15 K/W Source-Drain Diode Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 30 A 120 A 1.5 V t rr I F = I, S -di/dt = 100 A/µs, V R = 100 V 850 ns TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A 2.2 2.54 1 A 2.2 2.6 2 b 1.0 1.4 b1 1.65 2.13 b 2.87 3.12 2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 […]

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30N45 Datasheet


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