This is a kind of IGBT. The IGBT is insulated-gate bipolar transistor.
PartNumber : 30F126, GT30F126
Manufactuers : Toshiba
Package : TO-220F Type
Description : LCD Plasma common tube TO-220F, IGBT 200A / 330V IGBT
The Toshiba discrete IGBTs
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages
Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131)
Reference Datasheet Download : [ 30F124.pdf ]
On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques.