30G120ASW Datasheet PDF -1200V, 30A, IGBT – APEC

Part Number : 30G120ASW

Function : N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Package : TO-3P Type

Manufacturers : Advanced Power Electronics Corp

Image :

30G120ASW image

Description :

This is 1200V, 30A, N-Channel IGBT.

Features :

1. High Speed Switching

2. Low Saturation Voltage : Typical V CE(sat) = 2.9V at Ic = 30A

3. RoHS-compliant, halogen-free TO-3P package

4. Internal “Co-Pak” Fast Recovery Diode

Pinouts :
AP30G120ASW datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 1200 V

2. Gate to emitter voltage : Vges = ± 30 V

3. Continuous Collector Current : Ic = 30 A (Tc = 100°C)

4. Maximum Power dissipation : Pd = 208 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

30G120ASW Datasheet PDF Download

AP30G120ASW pdf
Datasheet Download : [  AP30G120ASW-HF-3.PDF ]

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