Part Number : 30G120ASW
Function : N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Package : TO-3P Type
Manufacturers : Advanced Power Electronics Corp
Image :
Description :
This is 1200V, 30A, N-Channel IGBT.
Features :
1. High Speed Switching
2. Low Saturation Voltage : Typical V CE(sat) = 2.9V at Ic = 30A
3. RoHS-compliant, halogen-free TO-3P package
4. Internal “Co-Pak” Fast Recovery Diode
Pinouts :
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : Vces = 1200 V
2. Gate to emitter voltage : Vges = ± 30 V
3. Continuous Collector Current : Ic = 30 A (Tc = 100°C)
4. Maximum Power dissipation : Pd = 208 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
30G120ASW Datasheet PDF Download
Datasheet Download : [ AP30G120ASW-HF-3.PDF ]
