Part Number: 40N03P, SSM40N03P
Function: 30V, 40A, N-Ch, MOSFET, Transistor
Package: TO-220 Type
Manufacturer: Silicon Standard
Images:
Description
The 40N03P is N-CHANNEL ENHANCEMENT-MODE POWER MOSFET.
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial and industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.
Features:
1. Low gate charge
2. Simple drive requirement
3. Fast switching
Absolute Maximum Ratings:
Symbol Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 40 30 169 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C TSTG TJ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 62 Unit °C/W °C/W Rev.2.01 7/01/2004 www.SiliconStandard.com 1 of 6 SSM40N03P Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.037 Max. Units 17 23 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=16A 14 20 26 17 3 10 7.2 60 22.5 10 800 380 133 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) […]
