40N03P – SSM40N03P

Part Number : 40N03P

Function : SSM40N03P

Manufactures : Silicon Standard

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Description :

SSM40N03P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate charge Simple drive requirement Fast switching G D S BVDSS R DS(ON) ID TO-220 30V 17mΩ 40A Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial and industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits. D G S Absolute Maximum Ratings Symbol Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 40 30 169 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C TSTG TJ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 62 Unit °C/W °C/W Rev.2.01 7/01/2004 www.SiliconStandard.com 1 of 6 SSM40N03P Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.037 Max. Units 17 23 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=16A 14 20 26 17 3 10 7.2 60 22.5 10 800 380 133 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=30V, VGS=0V VDS=24V,VGS=0V VGS= ± 20V ID=20A VDS=24V VGS=5V VDS=15V ID=20A RG=3.3Ω ,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain (“Miller”) Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Coss Crss Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. – Typ. – Max. Units 40 169 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25°C, IS=40A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. Rev.2.01 7/01/2004 www.SiliconStandard.com 2 of 6 SSM40N03P 150 T C =25 C 150 o V G =10V V G =8.0V ID , Drain Current (A) T C =150 o C V G =10V V G =8.0V ID , Drain Current (A) 100 V G =6.0V 100 V G =6.0V 50 50 V G =4.0V V G =4.0V V G =3.0V 0 V G =3.0V 0 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 10 V DS , Drain-to-Source Vol [...]

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40N03P Datasheet


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