This is one of the IGBT types.
The IGBT is insulated-gate bipolar transistor.
Marking : 40N60NPFD
Part Number : SGT40N60NPFDPN
Function : 40A, 600V, Field Stop IGBT
Package : TO-3P type
Manufacturers : silan Microelectronics
See the preview image and the PDF file for more information.
Image
Description :
40N60NPFD using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.
Features
1. 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A
2. Low conduction loss
3. Fast switching
4. High input impedance
pinout
Absolute maximum ratings ( Ta=25°C )
1. Collector to Emitter Voltage : VCE = 600 V
2. Gate to Emitter Voltage : VGE = ±20 V
3. Collector Current : Ic = 80 A
4. Pulsed Collector Current : ICM = 120 A
5. Maximum Power Dissipation (TC=25°C) : PD = 290 W
6. Operating Junction Temperature TJ -55～+175 °C
7. Storage Temperature Range Tstg -55～+175 °C
40N60NPFD Transistor Datasheet
