4128D – NPN EPITAXIAL SILICON TRANSISTOR

Part Number : 4128D

Function : NPN EPITAXIAL SILICON TRANSISTOR

Manufactures : Unisonic Technologies

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Description :

UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplifier circuit, electronic ballasts and energy-saving light etc. „ FEATURES * High switching speed * High reliability „ SYMBOL 1 TO-126 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4128DL-T60-K 4128DG-T60-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-126 Pin Assignment 123 BCE 4128DL-T60-T (1)Packing Type (2)Package Type (3)Lead Free (1) B: Bulk (2) T60: TO-126 (3) L: Lead Free, G: Halogen Free Packing Bulk www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R204-029.A 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage (VBE=0) VCES 350 V Collector-Emitter Voltage (IB=0) VCEO 200 V Emitter-Base Voltage VEBO 7 V Collector Current DC Pulse (Note 2) IC ICP 5A 10 A Base Current DC Pulse (Note 2) IB IBP 2A 4A Total Dissipation PC 40 W Junction Temperature Storage Temperature Range TJ TSTG 150 -55~+150 °C °C Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be permanently damaged. 2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%. „ THERMAL CHARACTERISTICS PARAMETER Junction to Case SYMBOL θJC „ ELECTRICAL CHARACTERISTICS RATINGS 3.125 UNIT °C/W PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VBE(SAT) hFE1 hFE2 fT tS tF TEST CONDITIONS IC=1mA, IB=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=350V, IE=0 VCE=200V, IB=0 VEB=7V, IC=0 IC=1A, IB=0.2A IC=3A, IB=0.6A IC=3A, IB=0.6A IC=0.8A,VCE=5V IC=3A,VCE=5V IC=0.5A, VCE=10V VCC=24V, IC=0.5A, IB1=-IB2=0.1A MIN TYP MAX UNIT 350 V 200 V 7V 100 µA 50 µA 10 μA 0.8 V 1.5 V 1.6 V 8 50 8 4 MHz 4 μs 0.7 μs UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R204-029.A 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life su [...]

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4128D Datasheet


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