50J322 Datasheet PDF – 600, 50A, IGBT, Transistor

Part Number : 50J322

Function : SILICON N CHANNEL MOST TYPE IGBT

Manufacturers : Toshiba

Image and Pinouts :

50J322 datasheet

 

Description :

This is 600V, 50A, The 4TH Generation IGBT.

Features :

1. FRD Included Between Emitter and Collector
2. Enhancement-Mode

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : Vces = 600 V

2. Gate to emitter voltage : Vges = ± 20 V

3. Collector current : Ic = 50 A

4. Collector dissipation : Pc = 130 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. Current Resonance Inverter Switching

Other data sheets within the file : GT50J322

 

50J322 Datasheet PDF Download


50J322 pdf