Part Number : 50J322
Function : SILICON N CHANNEL MOST TYPE IGBT
Manufacturers : Toshiba
Image and Pinouts :
Description :
This is 600V, 50A, The 4TH Generation IGBT.
Features :
1. FRD Included Between Emitter and Collector
2. Enhancement-Mode
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : Vces = 600 V
2. Gate to emitter voltage : Vges = ± 20 V
3. Collector current : Ic = 50 A
4. Collector dissipation : Pc = 130 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications :
1. Current Resonance Inverter Switching
Other data sheets within the file : GT50J322
50J322 Datasheet PDF Download
