5N60C – FQB5N60C

Part Number : 5N60C

Function : FQB5N60C

Manufactures : Fairchild Semiconductor

Images :

1 page
5N60C image

2 page
pinout

Description :

FQB5N60C / FQI5N60C QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ◀ ! ● ▲ ● ● G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage – Continuous (TC = 25°C) Drain Current – Continuous (TC = 100°C) Drain Current – Pulsed (Note 1) FQB5N60C / FQI5N60C 600 4.5 2.6 18 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) – Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8″ from case for 5 seconds 210 4.5 10 4.5 3.13 100 0.8 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Typ Max 1.25 40 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2003 Fairchild Semiconductor Corporation Rev. A, October 2003 FQB5N60C / FQI5N60C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ——0.6 ——1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.25 A VDS = 40 V, ID = 2.25 A (Note 4) 2.0 — -2.0 4.7 4.0 2.5 — V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz —51 […]

3 page
image

5N60C Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.