60N60 Datasheet – 600V, 100A, IGBT – IXYS

This post explains for the semiconductor 60N60.

The Part Number is 60N60.

The function of this semiconductor is Ultra-low Vce(sat) Igbt.

Manufacturers : IXYS Corporation

Preview images :

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60N60 image

Description :

Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 100 60 200 ICM = 100 @ 0.8 VCES 250 -55 … +150 150 -55 … +150 V V V V A A A A W °C °C °C SOT-227B miniBLOC Ex G Ex C G = Gate, C = Collector, E = Emitter x Either emitter terminal can be used as Main or Kelvin Emitter Features q q q Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 300 g °C q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s q q q International standard package SOT-227B Aluminium nitride isolation – high power dissipation Isolation voltage […]

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60N60 Datasheet


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