60R580 – N-channel MOSFET

Part Number : 60R580

Function : N-channel MOSFET

Manufactures : MagnaChip

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Description :

MMIS60R580P Datasheet MMIS60R580P 600V 0.58Ω N-channel MOSFET  Description MMIS60R580P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.58 3 8 18 Unit V Ω V A nC  Package & Internal Circuit D G D S G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMIS60R580PTH 60R580P Temp. Range -55 ~ 150℃ Package TO-251-VS (IPAK-VS) Mar. 2016 Revision 1.1 1 Packing Tube RoHS Status Halogen Free MagnaChip Semiconductor Ltd. MMIS60R580P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single – pulse avalanche energy MOSFET dv/dt ruggedness Symbol VDSS VGSS ID IDM PD EAS dv/dt Rating 600 ±30 8 5 24 70 170 50 Unit V V A A A W mJ V/ns Note TC=25℃ TC=100℃ Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS dv/dt Tstg Tj 15 -55 ~150 150 V/ns ℃ ℃  Thermal Characteristics Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rthja Value 1.8 62.5 Unit ℃/W ℃/W Mar. 2016 Revision 1.1 2 MagnaChip Semiconductor Ltd. MMIS60R580P Datasheet  Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Drain – Source Breakdown voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On State Resistance Symbol Min. Typ. Max. Unit Test Condition V(BR)DSS 600 – – V VGS = 0V, ID=0.25mA VGS(th) 2 3 4 V VDS = VGS, ID=0.25mA IDSS – – 1 μA VDS = 600V, VGS = 0V IGSS RDS(ON) – – 100 nA VGS = ±30V, VDS =0V – 0.53 0.58 Ω VGS = 10V, ID = 2.5 A  Dynamic Characteristics (Tc=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Energy Related (3) Turn On Delay Time Ciss Coss Crss Co(er) td(on) – 575 – 428 – 25 – 18 – 14 – VDS = 25V, VGS = 0V, pF f = 1.0MHz VDS = 0V to 480V, VGS = 0V,f = 1.0MHz Rise Time Turn Off Delay Time tr td(off) – 34 – 48 – ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 8 A Fall Time tf – 25 – Total Gate Charge Gate – Source Charge Gate – Drain Charge Qg – 18 – Qgs – 5 – nC […]

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60R580 Datasheet


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