60N60FD1 Datasheet – 600V, 60A, IGBT (Transistor)

This is one of the IGBT types.

The IGBT is insulated-gate bipolar transistor.

Part Number : 60N60FD1

Function : 600V, 60A, IGBT

Package : TO-3P, TO-247 Type

Manufacturers : Hangzhou Silan Microelectronics ( http: //www.silan.com.cn )

Images :

60N60FD1 transistor datasheet

Description :

60N60FD1 insulated gate bipolar transistor with field stop (Field Stop)
Process production, with low conduction loss and switching loss, the product can be applied to UPS, SMPS and PFC and other fields.

Features

1. 60A, 600V, VCE(sat) (typical value)=2.2V@IC=60A
2. Low conduction loss
3. Fast switching speed
4. High input impedance

Pinout

60N60FD1 igbt data

Absolute maximum ratings ( Tc=25°C )

1. Collector-emitter voltage : VCE = 600 V
2. Gate-emitter voltage : VGE = ±20 V
3. Collector current : 120 A
4. Collector pulse current : ICM = 180 A
5. Power dissipation : PD = 321 W
6. Operating junction temperature range : TJ = -55~+150 °C
7. Storage temperature range : Tstg = -55~+150 °C

Other data sheets within the file : SGT60N60FD1PN, SGT60N60FD1P7

60N60FD1 IGBT Datasheet (Transistor)

60N60FD1 pdf