Part Number : 70T03GH, AP70T03GH
Function : 30V, 60A, N-Channel MOSFET, Transistor
Package : TO-252, TO-251
Manufactures : Advanced Power Electronics
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Description :
AP70T03GH/J Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G S BVDSS RDS(ON) ID 30V 9mΩ 60A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 60 43 195 53 0.36 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200823053-1/4 AP70T0G3H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 – Typ. 0.03 35 17 5 10 13.5 8 105 22 9 245 170 Max. Units 9 18 3 1 250 ±100 27 22 V V/℃ mΩ mΩ V S uA uA nA nC nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A VGS=4.5V, ID=20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C) o o VDS=VGS, ID=250uA VDS=10V, ID=33A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±20V ID=33A VDS=20V VGS=4.5V VDD=15V,VGS=0V VDS=15V ID=33A RG=3.3Ω,VGS=10V RD=0.45Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain (“Miller”) Charge Output Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1485 2400 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=33A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. – Typ. 27 20 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP70T03GH/J 120 200 T C =25 C ID , Drain Current (A) 150 o 10V 8.0V 90 T C =175 o C ID , Drain Current (A) 10V 8.0V 6.0V 6.0V 100 60 50 V G =4. [...]
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