Part Number: 72T02GH, AP72T02GH, AP72T02
Function: 25V, 62A, N-Ch, Power MOSFET
Package: TO-252, TO-251 Type
Manufacturer: Advanced Power Electronics
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Description
72T02GH is 25V, 62A, N-Channel MOSFET. An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.
One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP72T02GJ) are available for low-profile applications.
Features
1. Simple Drive Requirement
2. Low On-resistance
3. Fast Switching Characteristic
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 25 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 62 A (Tc = 25°C)
4. Total Power Dissipation: Pd = 60 W (Tc = 25°C)
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C