Part Number: 7MBR25UA120
Function: 1200V 25A, IGBT
Package: Module Type
Manufacturer: Fuji Electric
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Description
This is 1200V / 25A / PIM IGBT Module.
Features
· Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICP -IC -IC pulse PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Condition Rating 1200 ±20 25 15 50 30 25 50 115 1200 ±20 25 15 50 30 115 1200 1600 25 260 338 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Continuous 1ms Tc=25°C Tc=80°C Tc=25°C Tc=80°C Unit V V A Inverter Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1ms 1 device Continuous 1ms 1 device Tc=25°C Tc=80°C Tc=25°C Tc=80°C W V V A PC V RRM V RRM IO IFSM I2t Tj Operating junction temperature Tstg Storage temperature Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Converter 50Hz/60Hz sine wave Tj=150°C, 10ms half sine wave AC : 1 minute W V V A A A 2s °C °C V V N·m *1 Recommendable value : 2.5 to 3.5 N·m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. IGBT Module Electrical characteristics (Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbol ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr ICES IGES VCE(sat) (terminal) VCE(sat) (chip) ton tr toff tf IRRM V FM IRRM R B Symbol Condition VCE=1200V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=25mA Tj=25°C VGE=15V Tj=125°C Ic=25A Tj=25°C Tj=125°C VGE=0V, VCE=10V, f=1MHz V CC=600V IC=25A VGE=±15V RG= 68 Ω VGE= 0 V IF=25A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Min. 4.5 465 3305 7MBR25UA120 Characteristics Typ. Max. 1.0 200 6.5 8.5 2.30 2.80 2.75 2.10 2.60 2.55 2 0.41 1.20 0.28 0.60 0.03 0.37 1.00 0.07 0.30 2.95 3.55 2.55 2.75 3.35 2.35 0.35 1.0 200 2.30 2.80 2.75 2.10 2.60 2.55 0.41 1.20 0.28 0.60 0.37 1.00 0.07 0.30 1.0 1.20 1.50 1.10 1.0 5000 495 520 3375 3450 Characteristics Typ. Max. 0.05 1.07 1.58 1.07 0.90 Unit mA nA V V Inverter Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake IF=25A VCE=1200V, VGE=0V VCE=0V, VGE=±2 […]
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