7N65C – FQP7N65C

Part Number : 7N65C

Function : FQP7N65C

Manufactures : Fairchild Semiconductor

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Description :

www.DataSheet.co.kr FQP7N65C/FQPF7N65C QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. ® Features • • • • • • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage – Continuous (TC = 25°C) Drain Current – Continuous (TC = 100°C) Drain Current – Pulsed (Note 1) FQP7N65C 650 7 4.2 28 FQPF7N65C 7* 4.2 * 28 * ± 30 212 7 1.6 4.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) – Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8″ from case for 5 seconds 160 1.28 -55 to +150 300 52 0.42 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP7N65C 0.78 0.5 62.5 FQPF7N65C 2.4 -62.5 Units °C/W °C/W °C /W ©2004 Fairchild Semiconductor Corporation Rev. A, May 2004 Datasheet pdf – http://www.DataSheet4U.net/ www.DataSheet.co.kr FQP7N65C/FQPF7N65C Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 650 ——0.8 ——1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A (Note 4) 2.0 — -1.2 8 4.0 1.4 — V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VG […]

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7N65C Datasheet


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