80NF03L-04 – STP80NF03L-04

Part Number : 80NF03L-04

Function : STP80NF03L-04

Manufactures : STMicroelectronics

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80NF03L-04 image

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Description :

STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V – 0.0035 Ω – 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) STB80NF03L-04/-1 STP80NF03L-04 30 V <0.004 Ω 30 V <0.004 Ω s TYPICAL RDS(on) = 0.0035Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW THRESHOLD DRIVE ID 80 A 80 A DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 1 D2PAK TO-263 123 I2PAK TO-262 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB80NF03L-04 STB80NF03L-04T4 STP80NF03L-04 STB80NF03L-04-1 MARKING 80NF03L-04 @ 80NF03L-04 @ 80NF03L-04 @ 80NF03L-04 @ ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID(**) Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C IDM(•) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. (**) Current Limited by Package February 2003 . PACKAGE D2PAK D2PAK TO-220 I2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE Value 30 30 ± 20 80 80 320 300 2 2 2.3 -60 to 175 175 (1) ISD ≤80A, di/dt ≤240A/µs, VDD ≤ 24V, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 40A, VDD = 20V Unit V V V A A A W W/°C V/ns J °C °C 1/11 STB80NF03L-04/-1/STP80NF03L-04 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.5 62.5 300 ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 30 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V °C/W °C/W °C Max. Unit V 1 10 ±100 µA µA nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS ID = 250 µA VGS = 10 V VGS = 4.5 V ID = 40 A ID = 40 A Min. 1 Typ. Max. 0.0035 0.004 0.004 0.0055 Unit V Ω Ω DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 15 A VDS = 2 [...]

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80NF03L-04 Datasheet


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