80NF70 Datasheet – 68V, MOSFET – STP80NF70 (Transistor)

This post explains for the semiconductor 80NF70.

The Part Number is 80NF70, STP80NF70.

The function of this semiconductor is 68V, N-channel MOSFET.

The package is TO-220 Type

Manufacturers : ST Microelectronics

See the preview image and the PDF file for more information.

Images :

80NF70 transistor


1 page

Description :

STP80NF70 N-channel 68 V, 0.0082 Ω , 98 A, TO-220 STripFET™ II Power MOSFET Features Type STP80NF70 ■ VDSS 68 V RDS(on) max < 0.0098 Ω ID 98 A Exceptional dv/dt capability 100% avalanche tested 1 3 2 Application ■ TO-220 Switching applications Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 80NF70 Package TO-220 Packaging Tube Order code STP80NF70 June 2010 Doc ID 17610 Rev 1 1/13 www.st.com 13 www.DataSheet4U.net Contents STP80NF70 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . […]

80NF70 pinout

80NF70 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 68 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 98 A
4. Drain power dissipation : PD = 190 W
5. Single pulse avalanche energy : Eas = 700 mJ
6. Channel temperature : Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C

 

80NF70 Datasheet

80NF70 pdf