8205A – Dual N-Channel MOSFET

Part Number : 8205A

Function : Dual N-Channel MOSFET

Manufactures : RZC Microelectronics

Images :

1 page
8205A image

2 page

Description :

8205A Dual N-Channel MOSFET . GENERAL DESCRIPTION The 8205Ais a dual N-channel MOS Field Effect Transistor which uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch . FEATURES l VDS =20 V l ID =6A l Low on-state resistance Fast switching RDS(on) = 45mΩ (typ.)(VGS = 4.5V, ID = 2.0A) RDS(on) = 48mΩ (typ.)(VGS = 3.85V, ID = 2.0A) RDS(on) = 60mΩ (typ.)(VGS = 2.5V, ID = 2.0A) l Lead free product is acquired l Surface Mount Package APPLICATION l Battery protection l Load switch l Power management PACKAGE MARKING AND ORDERING INFORMATION Device Marking 8205A Device 8250A Device Package TSSOP8 Reel size Tape width 8mm Quantity 3000 units Φ180mm PIN DESCRIPTION Datasheet 2012-2-27 Page 1 of 6 8205A PIN NUM 1 2 3 4 5 6 7 8 PIN NAME D S1 S1 G1 G2 S2 S2 D PIN FUNCTION DRAIN SOURCE1 SOURCE1 GATE2 GATE2 SOURCE2 SOURCE2 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25℃) Symbol VDS ID IDM VGS PD Tstg Parameter Drain-source Voltage Drain Current(continuous)at Tc=25℃ Drain Current (pulsed) Gate-source Voltage Power Dissipation (TC = 25°C) Operating and Storage Temperature Rang Value 20 (Note1) (Note2) (Note1) 6 24 ±12 1.25 -55 to +150 Unit V A A V W ℃ Notes a. PW<10us,Duty Cycle<1%,VGS=4.5V 2 b. Mounted on ceramic substrate of 45 cm x 2.2mm. Caution: These values must not be exceeded under any conditions. Remark: The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction- ambient Max. 83 Unit ℃/W Electrical Characteristics (TC = 25℃) Symbol V(BR)DSS IDSS IGSS VGS(th) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate threshold voltage Test Conditions ID=250uA, VGS=0V VDS=20V,VGS=0V VGS=±10V,VDS=0V VDS=VGS,ID= 250uA VGS=4.5V,ID=2A RDS(on) Drain to Source On-state Resistance VGS=3.85V,ID=2A VGS=2.5V,ID=2A Ciss Coss Crss td(on) tr Datasheet Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time VDD=10V,ID=3A, VGS=4.5V,RG=4.7 VDS=15V,VGS=0V,f=1MHz 0.5 45 48 60 370 89 9.7 200 (Note2,3) 236 Min. 20 1 ±1 1.15 50 52 70 µA µA V mΩ mΩ mΩ pF pF pF ns ns Page 2 of 6 Typ. Max. Unit V 2012-2-27 8205A td(off) tf Qg Qgs Qgd VSD(*) Trr Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time IF=6A,VGS=0V VDD=10V,IF=6A,di/dt=100A/us (Note2) VDD=16V,VGS=4.5V, ID=6A 36 165 7.5 (Note2,3) 2.5 1.3 0.74 80 1.2 ns ns nC nC nC V ns Notes: 1. Surface Mounted on FR4 Board, t≤10sec 2. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. Essentially independent of operating temperature (*)Pulsed: [...]

3 page

8205A Datasheet

This entry was posted in Uncategorized. Bookmark the permalink.