9435 – P-Channel Enhancement Mode MOSFET

Part Number : 9435

Function : P-Channel Enhancement Mode MOSFET

Manufactures : Tuofeng Semiconductor

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Description :

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-5.3A, RDS(ON) = 60mΩ(typ.) @ VGS = -10V RDS(ON) = 90mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Package Applications S1 S2 S3 G4 8D 7D 6D 5D SO − 8 S SS • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G DD DD P-Channel MOSFET Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol VDSS VGSS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous TA = 25°C Maximum Drain Current – Pulsed Rating -30 ±20 -4.6 -20 Unit V A TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol PD TJ)TSTG RθJA Parameter Maximum Power Dissipation TA = 25°C TA = 100°C Maximum Operating and Storage Junction Temperature Thermal Resistance – Junction to Ambient Rating 2.5 1.0 -55 to 150 50 Unit W °C °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250µA IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA IGSS Gate Leakage Current VGS=±20V, VDS =0V VGS=-10V, ID=-5.3A RDS(ON) Drain-Source On-state Resistance b VGS=-4.5V, ID=-4.2A VSD Diode Forward Voltage b ISD=-3A, VGS=0V Dynamica Qg Qgs Qgd td(ON) tr td(OFF) tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=-15V, VGS=-10V, ID=-4.6A VDD=-25V, RL=12.5Ω, ID=-2A , VGEN=-10V, RG=6Ω, VGS=0V, VDS=-25V Frequency = 1.0MHZ Notes a : Guaranteed by design, not subject to production testing b : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% 9435 Min. Typa. Max. Unit -30 V -1 uA -1 -3 V ±100 nA 50 60 mΩ 80 90 -0.6 -1.3 V 22.5 4.5 2 8 8 35 11 845 120 80 29 17 18 60 28 nC ns pF 2 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 9435 Typical Characteristics -ID-Drain Current (A) Output Characteristics 20 -VGS=5,6,7,8,9,10V -VGS=4V 15 10 -VGS=3V 5 0 0 2 4 6 8 10 -VDS – Drain-to-Source Voltage (V) -ID-Drain Current (A) Transfer Characteristics 20 15 10 TJ=25°C 5 TJ=125°C TJ=-55°C 0 012345 -VGS – Gate-to-Source Voltage (V) -VGS(th)-Threshold Voltage (V) (Normalized) Threshold Voltage vs. Junction Temperature 1.50 -IDS=250µA 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 0 25 50 75 100 125 150 Tj – Junction Temperature (°C) RDS(on)-On-Resistance (Ω) On-Resistance vs. Drain Current 0.16 0 […]

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9435 Datasheet


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