9N50C Datasheet – 9A, 500V, MOSFET, Transistor

Part Number : 9N50C

Function : N-Channel QFET MOSFET, 500V, 9A

Package : D2-PAK Type

Manufacturers : Fairchild Semiconductor

Image and Pinouts :

9N50C datasheet

 

Description :

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

 

Features :

1. 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V

2. Low gate charge ( typical 28 nC)

3. Low Crss ( typical 24 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 9 A

4. Power Dissipation : Pd = 135 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Other data sheets within the file : 9N50CTM, FQB9N50C, FQB9N50CTM

9N50C Datasheet PDF Download


9N50C pdf