9N50C PDF Datasheet – 500V, 9A, MOSFET, FQI9N50C

This post explains for the MOSFET. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

The Part Number is 9N50C, FQI9N50C.

The function of this semiconductor is 500V, 9A, MOSFET.

The package is D2-Pak, I2-Pak Type

Manufacturer: Fairchild Semiconductor

Preview images :9N50C pdf pinout


9N50C is 500V N-Channel MOSFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology



• 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 24 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

9N50C datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9 A

4. Power Dissipation: Pd = 135 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


9N50C PDF Datasheet