Part Number : A2098
Function : High-Current Switching Applications
Manufactures : Sanyo
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Description :
Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions unit : mm 2041A [2SA2098 / 2SC5887] 10.0 3.2 4.5 2.8 Relay drivers, lamp drivers, motor drivers. Features • • • • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specifications ( ) : 2SA2098 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Conditions 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 Ratings (–50)60 (–)50 (–)6 (–)15 (–)20 (–)3 2 30 150 –55 to +150 Unit V V V A A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)1A Ratings min typ max (–)10 (–)10 180 (200)300 (400)560 MHz Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-3725, 3726 No.7495-1/5 Free Datasheet http:// 2SA2098 / 2SC5887 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO td(on) tstg tf Conditions VCB=(–)10V, f=1MHz IC=(–)7A, IB=(-)350mA IC=(–)7A, IB=(-)350mA IC=(–)100µA, IE=0 IC=(–)1mA, RBE=∞ IE=(-)100µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (–50)60 (–)50 (–)6 (80)50 (400)700 (30)40 Ratings […]
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