A673 – 2SA673

Part Number : A673

Function : 2SA673

Manufactures : Hitachi Semiconductor

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Description :

2SA673, 2SA673A Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC1213 and 2SC1213A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA673, 2SA673A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA673 –35 –35 –4 –500 400 150 –55 to +150 2SA673A –50 –50 –4 –500 400 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA673 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current trnsfer ratio DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE*1 hFE Min –35 –35 –4 — — 60 10 — Typ — — — — –0.2 — — Max — — — –0.5 –0.6 320 — 2SA673A Min –50 –50 –4 — — 60 10 — Typ — — — — –0.2 — — Max — — — –0.5 –0.6 320 — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, I B = –15 mA*2 VCE = –3 V, I C = –10 mA VCE = –3 V, I C = –500 mA*2 VCE = –3 V, I C =–10 mA Base to emitter voltage VBE –0.64 — –0.64 — Notes: 1. The 2SA673 and 2SA673A are grouped by h FE as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 2 2SA673, 2SA673A Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Typical Output Characteristics (1) –100 –1. 0 Collector Current IC (mA) –80 –0.9 –0.8 PC = 40 0 W m –0.6 –0.7 –60 400 –0.5 –40 –0.4 –0.3 200 –20 –0.2 –0.1 mA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) –500 Collector Current IC (mA) Collector Current IC (mA) –7 –6 –5 –4 –3 –2 –1 mA –100 IB = 0 0 –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) –30 Typical Transfer Characteristics VCE = –3 V –400 –10 –300 Ta = 75° –200 –1.0 PC = 400 mW –0.3 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 25 –25 –3 C 3 2SA673, 2SA673A DC Current Transfer Ratio vs. Collector Current 150 Gain Bandwidth Product fT (MHz) DC Current Transfer ratio hFE VCE = –3 V 75 Gain Bandwidth Product vs. Collector Current 240 200 160 120 80 40 0 –5 VCE = –3 V 100 50 25 0 °C –25 50 Ta = 0 –2 –5 –10 –20 –50 –100 –200 Collector Current IC (mA) –500 –10 –20 –50 –100 –200 Collector Current IC (mA) –500 4 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 ± 0.1 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Con […]

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A673 Datasheet


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