AN7523N – Silicon Monolithic Bipolar IC

Part Number : AN7523N

Function : Silicon Monolithic Bipolar IC

Manufactures : Matsudhita

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AN7523N image

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Description :

Prepared Checked Approved Product Specifications Ref No. Total Page Page No. A-1 9 1 AN7523N Silicon Monolithic Bipolar IC Structure Appearance Application Function SIL-9 Pin Plastic Package (Power Type with Fin) Low Frequency Amplifier BTL 4.0W x 1ch Power Amplifier with Standby Function and Volume Function A No. 1 2 3 4 5 6 7 8 Absolute Maximum Ratings Item Storage Temperature Operating Ambient Temperature Operating Ambient Pressure Operating Constant Acceleration Operating Shock Supply Voltage Supply Current Power Dissipation Symbol Tstg Topr Popr Gopr Sopr Vcc Icc PD Ratings -55 ~ +150 -25 ~ +70 1.013×105±0.61×105 (1.0±0.6) 9,810 (1000) 4,900 (500) Unit °C °C Pa (atm) m/s2 (G) m/s2 (G) Note 1 1 14.4 1.0 1.22 V A W 2 Ta=70°C Operating Supply Voltage Range Vcc 3.5V ~ 13.5V Note 1) The temperature of all items shall be Ta=25°C except storage temperature and operating ambient temperature. 2) At no signal input. Eff. Date Eff. Date Eff. Date Eff. Date Matsushita Electronics Corporation 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Prepared Checked Approved Product Specifications Ref No. Total Page Page No. B-1 9 2 AN7523N B Electrical Characteristics No Item 1 2 Quiescent Circuit Current Standby Current (Unless otherwise specified, the ambient temperature is 25°C±2˚C, Vcc=8.0V, frequency=1kHz and RL=8Ω.) Test Symbol Cir- Conditions cuit ICQ ISTB VNO GV THD PO 1 PO 2 RR Voff Att G Vm 1 1 1 1 1 1 1 1 1 1 1 Vin=0V, Vol=0V Vin=0V, Vol=0V Rg=10kΩ, Vol=0V Po=0.5W, Vol=1.25V Po=0.5W, Vol=1.25V THD=10%, Vol=1.25V Vcc=9V THD=10%, Vol=1.25V Rg=10kΩ, Vol=0V Vr=0.5Vrms, fr=120Hz Rg=10kΩ, Vol=0V Po=0.5W, Vol=0V Po=0.5W, Vol=0.6V Limits min typ max 31 2.4 3.2 30 -250 70 20 1 0.10 33 0.10 3.0 4.0 50 0 85 60 10 0.4 35 0.5 250 – Unit mA µA mVrms dB % W W dB mV dB dB Note Output Noise 3 Voltage 4 5 6 7 8 9 Voltage Gain Total Harmonic Distortion Maximum Power Output 1 Maximum Power Output 2 Ripple Rejection Ratio Output Offset Voltage 1 1 10 Volume Attenuation Ratio 11 Middle Voltage Gain 1 20.5 23.5 26.5 Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT). Eff. Date Eff. Date Eff. Date Eff. Date Matsushita Electronics Corporation 25-APR-2000 21-JUL-2000 FMSC-PSDA-002-01 Prepared Checked Approved Product Specifications (Reference Data for Design) Ref No. Total Page Page No. B-2 9 3 AN7523N B Electrical Characteristics No Item pin 1 Standby current 2 Volume pin current 3 Input Impedance (Unless otherwise specified, the ambient temperature is 25°C±2°C, Vcc=8.0V, frequency=1kHz and RL=8Ω.) Test Symbol Cir- Conditions cuit ISTB2 IVOL Zi 1 1 1 Vin=0V, VSTB=3V Vin=0V, Vol=0V Vin=±0.3VDC Limits min typ max -12 24 30 25 36 Unit µA µA kΩ Note Note) The above characteristics are reference values determined for IC design, but not guaranteed values for shipping inspection. If problems were to occur, counter measures will be sincerely discussed. Eff. Date Eff. Date Eff. Date Ef […]

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AN7523N Datasheet


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