Part Number : APM4010N
Function : N-Channel Enhancement Mode MOSFET
Manufactures : ANPEC
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Description :
APM4010NU N-Channel Enhancement Mode MOSFET Features • 40V/57A, RDS(ON)=8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V Pin Description • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter. G S N-Channel MOSFET Ordering and Marking Information APM4010N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TR : Tape & Reel TU : Tube Lead Free Code L : Lead Free Device APM4010N U : APM4010N XXXXX XXXXX – Date Code Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.1 – Jul, 2007 1 www.anpec.com.tw Free Datasheet http://www.0PDF.com APM4010NU Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS Parameter Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 40 ±20 150 -55 to 150 20 140 100 57 35 50 W 20 2.5 48 32 12 8 2.5 W 1 50 °C/W A A °C/W V °C °C A Unit Common Ratings (TA=25°C Unless Otherwise Noted) Mounted on Large Heat Sink IDP ID PD RθJC 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in pad area IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TC=25°C TC=100°C TA=25°C TA=100°C TA=25°C TA=100°C TC=25°C TC=100°C TA=25°C TA=100°C TA=25°C TA=100°C Mounted on PCB of Minimum Footprint IDP ID PD RθJA 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient 40 24 10 6 1.5 0.5 75 A A W °C/W Copyright © ANPEC Electronics Corp. Rev. A.1 – Jul., 2007 2 www.anpec.com.tw Free Datasheet http://www.0PDF.com APM4010NU Electrical Characteristics Symbol Parameter (TA=25°C Unless Otherwise Noted) Test Condition APM4010NU Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage IDSS V GS(th) IGSS R DS(ON) a VGS=0V, I DS=250 µA VDS=32V, VGS=0V T J=85°C VDS=VGS, IDS=250µA VGS=±20V, V DS=0V VGS=10V, IDS=15A VGS=5V, IDS=8A ISD=15A, V GS=0V IDS=15A, dlSD/dt=100A/µs 40 1 30 1.5 2 8.2 13 2.5 ±100 10 17 V µA V nA mΩ Zero Gate Voltage Drain Current Gate Threshold Voltage […]
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