APM4546J – Dual Enhancement Mode MOSFET

Part Number : APM4546J

Function : Dual Enhancement Mode MOSFET

Manufactures : Anpec Electronics

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APM4546J image

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Description :

APM4546J Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description • N-Channel 30V/8A, R DS(ON) =20mΩ (typ.) @ V GS = 10V RDS(ON) =27mΩ (typ.) @ VGS = 4.5V • P-Channel -30V/-6A, RDS(ON) =38mΩ (typ.) @ VGS =-10V R DS(ON) =46mΩ (typ.) @ V GS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications Top View of PDIP − 8 (8) (7) D1 D1 (3) S2 (4) G2 (2) G1 • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems S1 D2 D2 (1) (5) (6) N-Channel MOSFET P-Channel MOSFET Ordering and Marking Information APM4546 Lead Free Code Handling Code Temp. Range Package Code Package Code J : PDIP-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube Lead Free Code L : Lead Free Device Blank : Original Device APM4546 J : APM4546 XXXXX XXXXX – Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.3 – Jan., 2006 1 www.anpec.com.tw APM4546J Absolute Maximum Ratings (T A = 25°C unless otherwise noted) Symbol Parameter VDSS VGSS ID- IDM- IS- TJ TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range VGS=10V (N) VGS=-10V (P) PD- Power Dissipation TA=25°C TA=100°C RθJA- Thermal Resistance-Junction to Ambient Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec. N Channel P Channel 30 -30 ±20 ±20 8 -6 30 -20 2 -2 150 -55 to 150 2.5 1 50 Unit V A A °C W °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Condition Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) a Drain-Source Resistance On-State VGS=0V, IDS=250µA VGS=0V, IDS=-250µA VDS=24V, VGS=0V TJ=85°C VDS=-24V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V VGS=±20V, VDS=0V VGS=10V, IDS=8A VGS=-10V, IDS=-6A VGS=4.5V, IDS=5A VGS=-4.5V, IDS=-4A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch APM4546J Unit Min. Typ. Max. 30 V -30 1 30 µA -1 -30 0.8 1.5 -0.8 -1.5 2 -2 V ±100 ±100 nA 20 26 38 50 mΩ 27 36 46 60 Copyright © ANPEC Electronics Corp. Rev. B.3 – Jan., 2006 2 www.anpec.com.tw APM4 […]

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APM4546J Datasheet

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