B1412 – 2SB1412

Part Number : B1412

Function : 2SB1412

Manufactures : Rohm

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Description :

Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −30 Collector-emitter voltage VCEO −20 Emitter-base voltage VEBO −6 Collector current −5 IC −10 Collector power dissipation 2SB1412 PC 1 10 Junction temperature Tj 150 Storage temperature Tstg −55 to 150 ∗1 Single pulse, Pw=10ms Unit V V V A(DC) A(Pulse) ∗1 W W(Tc=25°C) °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio Transition frequency hFE fT Output capacitance ∗ Measured using pulse current. Cob Min. −30 −20 −6 − − − 82 − − Typ. − − − − − 0.35 − 120 60 Max. − − − −0.5 −0.5 −1.0 390 − − Unit V V V µA µA V − MHz pF Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −5V IC/IB= −4A/ −0.1A VCE= −2V, IC= −0.5A ∗ ∗ VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 – Rev.C 2SB1412 zPackaging specifications and hFE Package Taping Code TL Type Basic ordering hFE unit (pieces) 2500 2SB1412 PQR hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 zElectrical characteristic curves −10 −5 VCE= −2V COLLECTOR CURRENT : IC (A) −2 −1 −500m Ta=100°C 25°C −25°C −200m −100m −50m −20m −10m −5m −2m −1m 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (A) −5 −50mA −45mA −40mA −4 −35mA −3 −2 −1 −30−m25AmA Ta=25°C −20mA −15mA −10mA −5mA IB=0A 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics DC CURRENT GAIN : hFE Data Sheet 5k Ta=25°C 2k 1k 500 VCE= −5V 200 100 −2V −1V 50 20 10 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 5k VCE= −1V 2k 1k 500 200 100 Ta=100°C 25°C 50 −25°C 20 10 5 −1m −2m −5m −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector curr […]

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B1412 Datasheet


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