B1453 – 2SB1453

Part Number : B1453

Function : 2SB1453

Manufactures : NEC

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B1453 image

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pinout

Description :

DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT: mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.5 A) • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)- IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings −60 −60 −7.0 −3.0 −6.0 −1.0 25 2.0 150 −55 to +150 Unit V V V A A A W W °C °C Electrode Connection 1. Base 2. Collector 3. Emitter – PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16129EJ2V0DS00 (2nd edition) Date Published July 2002 N CP(K) Printed in Japan © 2002 1998 2SB1453 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Turn-on time Storage time Fall time Symbol ICBO hFE1*- hFE2*- VCE(sat)*- VBE(sat)*- fT Cob ton tstg tf Conditions VCB = −60 V, IE = 0 VCE = −5.0 V, IC = −0.5 A VCE = −5 V, IC = −3 A IC = −3.0 A, IB = −300 mA IC = −3.0 A, IB = −300 mA VCE = −5.0 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1.0 MHz IC = −2.0 A, IB1 = −IB2 = −200 mA, RL = 15 Ω, VCC ≅ −30 V Refer to the test circuit. 5 80 0.4 1.7 0.5 100 20 −1.0 −2.0 MIN. TYP. MAX. −10 400 Unit µA − − V V MHz pF µs µs µs *- Pulse test PW ≤ 350 µs, duty cycle ≤ 2% SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 Data Sheet D16129EJ2V0DS 2SB1453 TYPICAL CHARACTERISTICS (Ta = 25°C) Data Sheet D16129EJ2V0DS 3 2SB1453 4 Data Sheet D16129EJ2V0DS 2SB1453 [MEMO] Data Sheet D16129EJ2V0DS 5 2SB1453 • The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC’s data sheets or data books, etc., for the most up-to-date s […]

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B1453 Datasheet


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