B20N03 – N-Channel Logic Level Enhancement Mode Field Effect Transistor

Part Number : B20N03

Function : N-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufactures : Excelliance MOS

Images :

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B20N03 image

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pinout

Description :

CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=8A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 2013/8/17 EMB20N03V LIMITS ±20 12 9 48 8 3.2 1.6 21 8.3 2.5 1 ‐55 to 150 UNIT V A mJ W W °C MAXIMUM 6 50 UNIT °C / W p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB20N03V LIMITS UNIT MIN TYP MAX STATIC CHIPSET-IC.COM Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A VDS = 5V, ID = 8A DYNAMIC 30 1 1.5 12 15.5 25 16 3 ±100 1 25 20 30 V nA A A mΩ S Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge1,2 Gate‐Source Charge1,2 Gate‐Drain Charge1,2 Turn‐On Delay Time1,2 Rise Time1,2 Turn‐Off Delay Time1,2 Fall Time1,2 Ciss Coss Crss Rg Qg(VGS=10V) Qg(VGS=4.5V) Qgs Qgd td(on) tr td(off) tf VGS = 0V, VDS = 15V, f = 1MHz VGS = 15mV, VDS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 8A VDS = 15V, ID = 1A, VGS = 10V, RGS = 6Ω 520 88 pF 62 2.0 Ω 11.5 5 nC 1.6 2.8 9 12 30 nS 15 SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C […]

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B20N03 Datasheet


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