B31N20D PDF Datasheet – 200V, MOSFET – IRFB31N20D

This post explains for the semiconductor B31N20D.

The Part Number is IRFB31N20D.

The function of this semiconductor is 200V, 31A, HEXFET Power MOSFET.

Manufacturers : International Rectifier

Preview images :

1 page
B31N20D image

Description :

This is 200V, 31A, HEXFET Power MOSFET.

Applications :

High frequency DC-DC converters VDSS 200V RDS(on) max 0.082Ω ID 31A

Benefits :

1. Low Gate-to-Drain Charge to Reduce Switching Losses

2. Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)

3. Fully Characterized Avalanche Voltage IRFB31N20D and Current

4. Package :

TO-220AB, D2Pak, TO-262

Absolute Maximum Ratings :

Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 31 21 124 3.1 200 1.3 ± 30 2.1 -55 to + 175 300 (1.6mm from case ) 10 lbf […]

 

B31N20D Datasheet