B649A Datasheet – 2SB649A Transistor

Part Number : B649A

Function : 2SB649A

Manufactures : Unisonic Technologies

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UNISONIC TECHNOLOGIES CO., LTD PNP SILICON TRANSISTOR 1 2SB649/A BIPOLAR POWER GENERAL PURPOSE TRANSISTOR Applications – Low frequency power amplifier complementary pair with UTC 2SB669/A SOT-89 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B 2SB649L-x-T92-B 2SB649-x-T92-K 2SB649L-x-T92-K 2SB649A-x-AB3-R 2SB649AL-x-AB3-R 2SB649A-x-T6C-K 2SB649AL-x-T6C-K 2SB649A-x-T60-K 2SB649AL-x-T60-K 2SB649A-x-T92-B 2SB649AL-x-T92-B 2SB649A-x-T92-K 2SB649AL-x-T92-K Package SOT-89 TO-126C TO-126 TO-92 TO-92 SOT-89 TO-126C TO-126 TO-92 TO-92 Pin Assignment 1 2 3 B C E E C B E C B E C B E C B B C E E C B E C B E C B E C B Packing Tape Reel Bulk Bulk Tape Box Bulk Tape Reel Bulk Bulk Tape Box Bulk 2SB649L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T 92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006,D 2SB649/A PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Collector Power Dissipation Junction Temperature Storage Temperature TO-126/TO-126C TO-92 SOT-89 2SB649 2SB649A SYMBOL VCBO VCEO VEBO IC lC(PEAK) PD TJ TSTG PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified) RATING -180 -120 -160 -5 -1.5 -3 1.4 1 500 +150 -40 ~ +150 UNIT V V V A A W W mW °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 Collector to Emitter Breakdown 2SB649 BVCEO IC=-10mA, RBE=∞ Voltage 2SB649A Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 Collector Cut-off Current ICBO VCB=-160V, IE=0 hFE1 VCE=-5V, IC=-150mA (note) 2SB649 hFE2 VCE=-5V, IC=-500mA (note) DC Current Gain hFE1 VCE=-5V, IC=-150mA (note) 2SB649A hFE2 VCE=-5V, IC=-500mA (note) Collector-Emitter Saturation Voltage VCE(SAT) Ic=-600mA, IB=-50mA Base-Emitter Voltage VBE VCE=-5V, IC=-150mA Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Note: Pulse test. MIN -180 -120 -160 -5 60 30 60 30 TYP MAX UNIT V V V µA -10 320 200 -1 -1.5 140 27 V V MHz pF CLASSIFICATION OF hFE RANK RANGE B 60-120 C 100-200 D 160-320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R204-006,D 2SB649/A TYPICAL CHARACTERISTICS Typical Output Characteristecs .5 PNP SILICON TRANSISTOR T […]

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B649A Datasheet

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