Part Number : B772
Function : MEDIUM POWER LOW VOLTAGE TRANSISTOR
Manufactures : Unisonic Technologies
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Description :
UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation( Tc=25°C) Collector Dissipation( Ta=25°C) Collector Current(DC) Collector Current(PULSE) Base Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Pc Ic Ic IB Tj TSTG VALUE -40 -30 -5 10 1 -3 -7 -0.6 150 -55 ~ +150 UNIT V V V W W A A A °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note 1) SYMBOL TEST CONDITIONS VCB=-30V,IE=0 VEB=-3V,Ic=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE=0,f=1MHz MIN TYP MAX -1000 -1000 UNIT nA nA ICBO IEBO hFE1 hFE2 Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1:Pulse test:PW<300µs,Duty Cycle<2% 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R204-002,A UTC 2SB772 RANK RANGE PNP EPITAXIAL SILICON TRANSISTOR Q 100-200 P 160-320 E 200-400 CLASSIFICATION OF hFE2 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics 150 Fig.2 Derating curve of safe operating areas 12 Fig.3 Power Derating -Ic,Collector current(A) 1.6 - Ic Derating(%) 1.2 -IB=6mA -IB=5mA 100 Power Dissipation(W) 150 200 -IB=9mA -IB=8MA -IB=7mA S/ 8 b lim 0.8 ite d io at ip ss Di -IB=4mA -IB=3mA 0.4 50 4 n lim -IB=2mA -IB=1mA 0 0 4 8 12 16 20 -50 0 50 ite d 0 0 100 -50 0 50 100 150 200 -Collector-Emitter voltage(V) Tc,Case Temperature(°C) Tc,Case Temperature(°C) Fig.4 Collector Output capacitance 3 10 3 10 Fig.5 Current gainbandwidth product 1 10 Fig.6 Safe operating area Ic(max),Pulse Ic(max),DC 10 mS 1m S S 1m 0. Output Capacitance(pF) FT(MHz), Current gainbandwidth product 2 10 IE=0 f=1MHz VCE=5V 2 10 -Ic,Collector current(A) 10 0 IB=8mA 1 10 1 10 -1 10 0 10 10 0 -1 10 -2 10 -3 10 0 10 -2 10 -1 10 10 0 1 10 -2 10 10 0 1 10 2 10 -Collector-Base Voltage(v) Ic,Collector current(A) Collector-Emitter Voltage Fig.7 DC current gain 3 10 4 10 Fig.8 Saturation Voltage VCE=-2V -Saturation Voltage(mV) DC current Gain,H FE 3 10 VBE(sat) 2 10 2 10 1 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) -Ic,Collector current(mA) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-002,A [...]
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