B772P – Audio Frequency Power Amplifier

Part Number : B772P

Function : Audio Frequency Power Amplifier

Manufactures : Fairchild Semiconductor

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Description :

KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC Rθja Rθjc TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction to Ambient Junction to Case Junction Temperature Storage Temperature Value – 40 – 30 -5 -3 -7 – 0.6 10 1 132 13.5 150 – 55 ~ 150 Units V V V A A A W W °C/W °C/W °C °C – PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current – DC Current Gain – Collector-Emitter Saturation Voltage – Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = – 30V, IE = 0 VEB = – 3V, IC = 0 VCE = – 2V, IC = – 20mA VCE = – 2V, IC = – 1A IC = – 2A, IB = – 0.2A IC = – 2A, IB = – 0.2A VCE = – 5V, IE = – 0.1A VCB = – 10V, IE = 0 f = 1MHz 30 60 220 160 – 0.3 – 1.0 80 55 Min. Typ. Max. -1 -1 400 – 0.5 – 2.0 V V MHz pF Units µA µA – Pulse Test: PW≤350µs, Duty Cycle≤2% hFE Classificntion Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. B, October 2002 KSB772 Typical Characteristics -2.0 1000 VCE = -2V IC[A], COLLECTOR CURRENT -1.6 -1.2 IB = -8mA IB = -7mA IB = -6mA IB = -5mA hFE, DC CURRENT GAIN IB = -10mA IB = -9mA 100 -0.8 IB = -4mA IB = -3mA 10 -0.4 IB = -2mA IB = -1mA 0 -4 -8 -12 -16 -20 1 -1 -10 -100 -1000 -10000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat),VBE(sat)[mV] SATURATION VOLTAGE -10000 IC = 10· I B 1000 IE = 0 f=1MHz -1000 Cob[pF], CAPACITANCE -100 -1000 -10000 VBE(sat) -100 100 10 -10 VCE(sat) -1 -1 -10 1 -1 -10 -100 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 -10 VCE =5V IC MAX(Pulse) 10 ms Dis Lim sipat ited ion 1m s s 0u 10 100 IC[A], COLLECTOR CURRENT IC MAX(DC) -1 s/b Lim ite d 10 -0.1 VCEOMAX 1 -0.01 -0.1 -1 -0.01 -1 -10 -100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. B, October 2002 KSB772 Typical Characteristics (Continued) 160 16 140 14 120 PC[W], POWER DISSIPATION 125 150 175 200 12 dT[%], Ic DERATING 100 10 80 s/b Di ss Lim 8 ited 60 ip a 6 40 tio n Li m ite 4 d 20 2 0 25 50 o 0 75 100 25 50 o 75 100 125 […]

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B772P Datasheet


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