B817C – 2SB817C

Part Number : B817C

Function : 2SB817C

Manufactures : Sanyo Electric

Images :

1 page
B817C image

2 page
pinout

Description :

Ordering number : ENA0188 2SB817C / 2SD1047C 2SB817C / 2SD1047C Features PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ) : 2SB817C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (–)160 (–)140 (–)6 (–)12 (–)20 2.5 120 150 –55 to +150 Unit V V V A A W W °C °C DataSheet4U.com DataSh ee Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitterr Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(–)160V, IE=0A VEB=(–)4V, IC=0A VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)5A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)5A IC=(–)5A, IB=(–)0.5A IC=(–)5mA, IE=0A IC=(–)50mA, RBE=∞ IE=(–)5mA, IC=0A (–)160 (–)140 (–)6 Ratings min typ max (–)0.1 (–)0.1 100 35 (10)15 (280)140 1.5 (-0.3)0.2 (–)2.0 MHz pF V V V V V 200 Unit mA mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13106DA MS IM TB-00001810 No. A0188-1/4 DataSheet 4 U .com 2SB817C / 2SD1047C Continued from preceding page. Parameter Symbol ton tstg tf Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min typ (0.45)0.56 (1.75)3.3 (0.25)0.4 max Unit µs µs µs Turn-On Time Storage Time Fall Time Package Dimensions unit : mm 7503-003 15.6 14.0 4.8 3.2 2.0 Switching Time Test Ci […]

3 page
image

B817C Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.