Part Number : B861
Function : 2SB861
Manufactures : Hitachi Semiconductor
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Description :
2SB861 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD1138 Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC – Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 Rating –200 –150 –6 –2 –5 1.8 30 150 –45 to +150 Unit V V V A A W W °C °C Free Datasheet http:// 2SB861 Electrical Characteristics (Ta = 25°C) Item Symbol Min –150 –6 — 1 Typ — — — — — — — 30 Max — — –1 200 — –3 –1 — Unit V V µA Test conditions I C = –50 mA, RBE = ∞ I E = –5 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –4 V, IC = –50 mA VCE = –10 V, IC = –500 mA*2 Collector to emitter breakdown V(BR)CBO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1- hFE2 Collector to emitter saturation voltage Base to emitter voltage Collector output capacitance VCE(sat) VBE Cob 60 60 — — — V V pF I C = –500 mA, IB = –50 mA VCE = –4 V, IC = –50 mA VCB = –100 V, IE = 0, f = 1 MHz Notes: 1. The 2SB861 is grouped by hFE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 40 Collector power dissipation Pc (W) –10 30 Collector Current IC (A) –5 –2 –1.0 –0.5 –0.2 –0.1 200 (–150 V, –65 mA) –0.05 –2 –5 –10 –20 –50 –100 –200 Collector to emitter Voltage VCE (V) IC (max) (Continuous) DC Area of Safe Operation (–15 V, –2 A) O pe 20 ra tio TC 10 (–60 V, –0.4 A) n (T C = 25 ) °C 1.8 W 0 Ta 150 100 50 Ambient temperature Ta (°C) Case temperature TC (°C) 2 Free Datasheet http:// 2SB861 Typical Output Characteristics –1.0 TC = 25°C Collector Current IC (A) –0.8 Typical Transfer Characteristics –1,000 VCE = –4 V –500 Collector current IC (mA) TC = 75°C –200 –100 –50 –20 –10 IB = 0 0 –4 –8 –12 –16 –20 Collector to emitter Voltage VCE (V) –5 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 Base to emitter voltage VBE (V) –1.0 25 –25 –8 –7 –6 –5 –0.6 –4 –3 –0.4 –2 –0.2 –1 mA DC Current Transfer Ratio vs. Collector Current Collector to emitter saturation voltage VCE (sat) (V) 500 DC current transfer ratio hFE 200 100 50 20 10 5 –10 –20 –50 –100 –200 –500–1,000 Collector current IC (mA) VCE = –4 V –10 –5 TC = 75°C 25 –25 Collector to Emitter Saturation Voltage vs. Collector Current IC = 10 IB –2 –1.0 –0.5 TC = 75°C 25 –25 –0.2 –0.1 –10 –20 –50 –100 –200 –500–1,000 Collector current IC (mA) Free Datasheet http:// 3 Unit: mm 11.5 MAX 2.79 ± 0.2 10.1 […]
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