Part Number : B892
Function : 2SB892
Manufactures : Sanyo Semiconductor Corporation
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Description :
Ordering number:930C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB892/2SD1207 Large-Current Switching Applications Features · Power supplies, relay drivers, lamp drivers, and automotive wiring. Package Dimensions unit:mm 2006A [2SB892/2SD1207] Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB892 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions B : Base C : Collector E : Emitter Ratings (–)60 (–)50 (–)6 (–)2 (–)4 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz 10 0 40 150 12 (22) MHz pF pF Conditions Ratings min typ max (–)0.1 (–)0.1 56 0 Unit µA µA – : The 2SB892/2SD1207 are graded as follows by hFE at 100mA : 100 R 200 140 S 280 200 T 400 280 U 560 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91098HA (KT)/4067KI/3145KI No.930–1/4 w w w . D a t a S h e e t 4 U . c o m 2SB892/2SD1207 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol VCE(sat) VBE(sat) Conditions IC=(–)1A, IB=(–)50mA Ratings min typ 0.15 (–0.3) IC=(–)1A, IB=(–)50mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 (–)0.9 (–)60 (–)50 (–)6 max 0.4 (–0.7) (–)1.2 Unit V V V V V V No.930–2/4 2SB892/2SD1207 No.930 […]
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