BD140 – PNP power transistors

Part Number : BD140

Function : PNP power transistors

Manufactures : NXP

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BD140 image

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Description :

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors Product specification Supersedes data of 1997 Mar 26 1999 Apr 12 Philips Semiconductors Product specification PNP power transistors FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. 3 PINNING PIN 1 2 BD136; BD138; BD140 DESCRIPTION emitter collector, connected to metal part of mounting surface base handbook, halfpage 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BD136 BD138 BD140 VCEO collector-emitter voltage BD136 BD138 BD140 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 70 °C open collector open base − − − − − − − − −65 − −65 −45 −60 −80 −5 −1.5 −2 −1 8 +150 150 +150 V V V V A A A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − −45 −60 −100 V V V MIN. MAX. UNIT 1999 Apr 12 2 Philips Semiconductors Product specification PNP power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Refer to TO-126 (SOT32) standard mounting conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −30 V PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base BD136; BD138; BD140 CONDITIONS note 1 VALUE 100 10 UNIT K/W K/W MIN. − − − 40 63 25 63 100 − − − − TYP. − − − − − − − − − − 160 1.3 MAX. UNIT −100 −10 −100 − 250 − 160 250 −0.5 −1 − 1.6 V V MHz nA µA nA IE = 0; VCB = −30 V; Tj = 125 °C IC = 0; VEB = −5 V VCE = −2 V; (see Fig.2) IC = −5 mA IC = −150 mA IC = −500 mA DC current gain IC = −150 mA; VCE = −2 V; BD136-10; BD138-10; BD140-10 (see Fig.2) BD136-16; BD138-16; BD140-16 VCEsat VBE fT h FE1 ———-h FE2 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs IC = −500 mA; IB = −50 mA IC = −500 mA; VCE = −2 V IC = −50 mA; VCE = −5 V; f = 100 MHz IC = 150 mA; VCE = 2 V 1999 Apr 12 3 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 handbook, full pagewidth 160 MBH730 hFE 120 VCE = −2 V 80 40 0 −10−1 −1 −10 −102 −103 IC (mA) −104 Fig.2 DC current gain; typical values. 1999 Apr 12 4 […]

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BD140 Datasheet


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