BD778 – Plastic Darlington Complementary Silicon Power Transistors

Part Number : BD778

Function : Plastic Darlington Complementary Silicon Power Transistors

Manufactures : Motorola Inc

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Description :

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD777/D Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain hFE = 1400 (Typ) @ IC = 2.0 Adc • Collector–Emitter Sustaining Voltage — @ 10 mAdc VCEO(sus) = 45 Vdc (Min) — BD776 VCEO(sus) = 60 Vdc (Min) — BD777, 778 VCEO(sus) = 80 Vdc (Min) — BD780 • Reverse Voltage Protection Diode • Monolithic Construction with Built–in Base–Emitter output Resistor MAXIMUM RATINGS Rating BD777 PNP BD776 BD778 BD780 – *Motorola Preferred Device NPN Symbol VCEO VCB VEB IC IB PD BD776 45 45 BD777 BD778 60 60 BD780 80 80 Unit Vdc Vdc Vdc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Peak Base Current 5.0 4.0 6.0 100 mAdc Watts W/_C Total Device Dissipation TC = 25_C – Derate above 25_C Operating and Storage Junction Temperature Range 15 0.12 TJ, Tstg – 65 to + 150 DARLINGTON 4–AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS _C CASE 77–08 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristics Symbol RθJC RθJA Max Unit Thermal Resistance, Junction to Case 8.34 83.3 _C/W _C/W Thermal Resistance, Junction to Ambient 16 1.6 TA PD, POWER DISSIPATION (WATTS) PD, POWER DISSIPATION (WATTS) 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 140 0 160 T, TEMPERATU […]

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BD778 Datasheet


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