BU5027AF – Bipolar Junction Transistor

Part Number : BU5027AF

Function : Bipolar Junction Transistor

Manufactures : Jingdao

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BU5027AF image

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Description :

R www.jdsemi.cn 深圳市晶导电子有限公司 ShenZhen Jingdao Electronic Co.,Ltd. BU5027AF Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Computer aided power and Switch-mode power supplies 2.FEATURES High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-220F 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 23 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE- VCE – sat VBE – sat tr tf ts fT VCBO VCEO VEBO IC Ptot Tj Tstg 1100 800 9 2.7 1.8 20 150 -55~150 V V V A W ℃ ℃ TEST CONDITION IC=1mA,IE=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=1100V, IE=0 VCE=800V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=200mA IC=1A, IB=0.5A IC=1A, IB=0.5A IC=500mA (UI9600) VCE=10V,IC=100mA, f=1MHz VALUE MIN TYP MAX 1100 800 9 10 20 10 8 15 35 0.6 1.5 1.5 0.6 2 4.5 UNIT V V V μA μA μA V V μs μs μs 4 MHz *: Pulse test tp≤300μs,δ≤2% Add: 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel:0755-29799516 Fax:0755-29799515 第 1 页 2013 版 R www.jdsemi.cn 深圳市晶导电子有限公司 ShenZhen Jingdao Electronic Co.,Ltd. 5. Characteristic Curve Fig1 SOA(DC) Ta=25℃ 1.0 20 16 12 BU5027AF Bipolar Junction Transistor Fig2 Ptot–T Ptot-Tc Ptot (W) IC (A) 0.1 0.01 1 10 100 VCE (V) 1000 Fig3 Static Characteristic 1 Ta=25℃ IB=50mA 8 4 Ptot-Ta 00 50 100 Tc ( C) Fig4 hFE-IC 150 100 Ta=25℃ VBEsat (V) hFE IC (A) 0.5 IB=10mA IB=5mA 0 0 5 VCE (V) Fig5 VCEsat-IC 10 Ta=25℃ IC/IB=2 1 0.1 10 10 1 VCE=5V 1mA 0.01 0.1 IC (A) 1 Fig6 VBEsat-IC 1.5 Ta=25℃ IC/IB=2 10 1.0 VCEsat (V) 0.01 0.1 1 Ic (A) 5 0.5 0.1 1 Ic (A) 5 Add: 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel:0755-29799516 Fax:0755-29799515 第 2 页 2013 版 R www.jdsemi.cn 深圳市晶导电子有限公司 ShenZhen Jingdao Electronic Co.,Ltd. 6.Package Dimentions(Unit:mm) TO-220F BU5027AF Bipolar Junction Transistor Add: 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C Tel:0755-29799516 Fax:0755-29799515 第 3 页 2013 版 […]

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BU5027AF Datasheet


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