C1815 – Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Part Number : C1815

Function : Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Manufactures : Toshiba Semiconductor

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Description :

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • • Low noise: NF = 1dB (typ.) at f = 1 kHz Complementary to 2SA1015 (O, Y, GR class) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 50 400 125 −55~125 www.DataSheet.co.kr Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-92 SC-43 2-5F1B Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Symbol ICBO IEBO hFE (1) (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Base intrinsic resistance Noise figure VCE (sat) VBE (sat) fT Cob rbb’ NF Test Condition VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA VCE = 6 V, IC = 150 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = −1 mA f = 30 MHz VCE = 6 V, IC = 0.1 mA f = 1 kHz, RG = 10 kΩ Min ⎯ ⎯ 70 25 ⎯ ⎯ 80 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 100 0.1 ⎯ ⎯ 2.0 50 1.0 Max 0.1 0.1 700 ⎯ 0.25 1.0 ⎯ 3.5 ⎯ 10 V V MHz pF Ω dB Unit μA μA Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700 1 2007-11-01 Datasheet pdf – http://www.DataSheet4U.net/ 2SC1815 www.DataSheet.co.kr 2 2007-11-01 Datasheet pdf – http://www.DataSheet4U.net/ 2SC1815 www.DataSheet.co.kr 3 2007-11-01 Datasheet pdf – http://www.DataSheet4U.net/ 2SC1815 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibi […]

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C1815 Datasheet


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