C2026 Datasheet – 2SC2026 Transistor

Part Number : C2026

Function : 2SC2026

Manufactures : Inchange Semiconductor

Images :

1 page
C2026 image

Description :

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2026 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cut […]

2 page
pinout

C2026 Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.