Part Number : C2078
Function : 2SC2078
Manufactures : Sanyo Semicon Device
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Description :
Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCER VEBO IC ICP PC Tj Tstg RBE=150Ω Tc=50˚C Conditions Ratings 80 75 5 3 5 1.2 10 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=1A, IB=0.1A IC=1A, IB=0.1A 10 µA 10 µA 25- 200- 100 150 MHz 45 60 pF 0.15 0.6 V 0.9 1.2 V – : The 2SC2078 are classified by 0.5A hFE as follows : 25 B 50 40 C 80 60 D 120 100 E 200 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1098HA (KT)/D251MH/4147KI/3145KI/2274KI No.462–1/4 2SC2078 Parameter Collector-to-Base Saturation Voltage Collector-to-Emitter Saturation Voltage Emitter-to-Base Saturation Voltage [At specified test circuit] Output Power Power Efficiency Symbol Conditions V(BR)CBO V(BR)CER V(BR)EBO IC=100µA, IB=0 IC=1mA, RBE=150Ω IE=100µA, IC=0 PO VCC=12V, f=27MHz, Pi=0.2W η 27MHz Output Power Test Circuit Ratings min typ 80 75 5 max Unit V V V 4.0 W 60 % No.462–2/4 2SC2078 No.462–3/4 […]
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