Part Number : C2166, 2SC2166
Function : 75V, 4A, Silicon NPN Power Transistor
Package : TO-220 Type
Manufactures : Mitsubishi Electric Semiconductor
Images :
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Description :
The C2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications.
Features :
1. High power gain : Gpe ≥ 13.8 dB
2. Emitter ballasted construction for high reliability and good performances.
3. TO-220 similar package is combinient for mounting
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Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage : Vcbo = 75 V
2. Collector to Emitter Voltage : Vceo = 75 V
3. Emitter to Base Voltage : Vebo = 5 V
4. Collector Current : Ic = 4 A
5. Collector Dissipation : Pc = 1.5 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperature : Tsg = -55 ~ +150°C
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Applications :
1. 3 to 4 watts output power amplifiers in HF band mobile radio applications.