C2166 PDF – 75V, 4A, NPN, Equivalent, 2SC2166 Transistor

Part Number : C2166, 2SC2166

Function : 75V, 4A, Silicon NPN Power Transistor

Package : TO-220 Type

Manufactures : Mitsubishi Electric Semiconductor

Images :

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C2166 image

Description :

The C2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications.

Features :

1. High power gain : Gpe ≥ 13.8 dB

2. Emitter ballasted construction for high reliability and good performances.

3. TO-220 similar package is combinient for mounting

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Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 75 V
2. Collector to Emitter Voltage : Vceo = 75 V
3. Emitter to Base Voltage : Vebo = 5 V
4. Collector Current : Ic = 4 A
5. Collector Dissipation : Pc = 1.5 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperature : Tsg = -55 ~ +150°C

 

 

2 page
pinout

Applications :

1. 3 to 4 watts output power amplifiers in HF band mobile radio applications.

C2166 Datasheet