C2328 – Silicon NPN Epitaxial Transistor

Part Number : C2328

Function : Silicon NPN Epitaxial Transistor

Manufactures : ETC

Images :

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C2328 image

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Description :

C2328 C2328 Silicon NPN Epitaxial Transistor Description: The C2328 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to A1020 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 760um×760um 210±20um 160×170um 130×260um Al Au(As) 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Symbol Test Condition Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain ICBO IEBO BVCBO BVCEO BVEBO hFE VCB=30V, IE=0 VEB=5V, IC=0 IC=0.1mA IC=10mA IE=0.1mA VCE=2V, IC=0.5A Collector Saturation Voltage VCE(sat) IC=1A, IB=50mA Min Max 0.1 0.1 30 30 5.0 80 400 0.5 Unit uA uA V V V V May.2004 Version :0.0 Page 1 of 1 […]

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C2328 Datasheet

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