C2335 – 2SC2335

Part Number : C2335

Function : 2SC2335

Manufactures : NEC

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Description :

DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES • Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A • Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A • Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions PW ≤ 300 µs, duty cycle ≤ 10% TC = 25°C TA = 25°C Ratings 500 400 7.0 7.0 15 Unit V V V A A 3.5 40 1.5 150 −55 to +150 A W W °C °C ORDERING INFORMATION Part No. 2SC2335 Package TO-220AB (TO-220AB) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14861EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 21090928 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Symbol Conditions Collector to emitter voltage Collector to emitter voltage Collector to emitter voltage VCEO(SUS) VCEX(SUS)1 VCEX(SUS)2 IC = 3.0 A, IB1 = 0.6 A, L = 1 mH IC = 3.0 A, IB1 = −IB2 = 0.6 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped IC = 6.0 A, IB1 = 2.0 A, −IB2 = 0.6 A, VBE(OFF) = −5.0 V, L = 180 µH, clamped Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current ICBO ICER ICEX1 ICEX2 VCB = 400 V, IE = 0 A VCE = 400 V, RBE = 51 Ω, TA = 125°C VCE = 400 V, VBE(OFF) = −1.5 V VCE = 400 V, VBE(OFF) = −1.5 V, TA = 125°C Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) ton tstg tf VEB = 5.0 V, IC = 0 A VCE = 5.0 V, IC = 0.1 ANote VCE = 5.0 V, IC = 1.0 ANote VCE = 5.0 V, IC = 3.0 ANote IC = 3.0 A, IB = 0.6 ANote IC = 3.0 A, IB = 0.6 ANote IC = 3.0 A, RL = 50 Ω, IB1 = −IB2 = 0.6 A, VCC ≅ 150 V Refer to the test circuit. Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking hFE2 M 20 to 40 L 30 to 60 K 40 to 80 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT 2SC2335 MIN. 400 450 400 20 20 10 TYP. MAX. 10 1.0 10 1.0 10 80 80 1.0 1.2 1.0 2.5 1.0 Unit V V V µA mA µA mA µA V V µs µs µs Base current waveform Collector current waveform 2 Data Sheet D14861EJ2V0DS […]

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C2335 Datasheet


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