Part Number : C3807
Function : 2SC3807
Manufactures : Sanyo Semicon Device
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Description :
www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Package Dimensions unit:mm 2043A [2SC3807] Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C B : Base C : Collector E : Emitter SANYO : TO-126LP Conditions Ratings 30 25 15 2 4 1.2 15 150 –55 to +150 Unit V V V A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=5V, IC=1A VCE=10V, IC=50mA VCB=10V, f=1MHz 800 600 260 27 MHz pF 1500 Conditions Ratings min typ max 0.1 0.1 3200 Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N3098HA (KT)/5257KI/D016AT, TS No.2018–1/4 Datasheet pdf – http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SC3807 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) IC=1A, IB=20mA IC=1A, IB=20mA 30 25 15 0.14 1.35 0.1 Conditions Ratings min typ 0.15 0.85 max 0.5 1.2 Unit V V V V V µs µs µs V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ V(BR)EBO ton tstg tf IE=10µA, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. Switching Time Test Circuit No.2018–2/4 Datasheet pdf – http://www.DataSheet4U.net/ www.DataSheet.co.kr 2S […]
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