C4429 Datasheet – NPN Transistor – 2SC4429

Part Number : C4429

Function : 2SC4429

Manufactures : Sanyo Semicon Device

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C4429 image

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Description :

Ordering number:EN2852 NPN Triple Diffused Planar Silicon Transistor 2SC4429 800V/8A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039D [2SC4429] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tc=25˚C PW≤300µs, duty cycle≤10% 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Conditions Ratings 1100 800 7 8 25 4 3 60 150 –55 to +150 2.0 Unit V V V A A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1- hFE2 VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.6A VCE=5V, IC=3A 10 8 Conditions Ratings min typ max 10 10 40 Unit µA µA – : The hFE1 of the 2SC4429 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. 10 K 20 15 L 30 20 M 40 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1898HA (KT)/N248MO, TS No.2852–1/4 2SC4429 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) fT IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=10V, IC=0.6A VCB=10V, f=1MHz 1100 800 7 800 0.5 3.0 0.3 15 155 Conditions Ratings min typ max 2.0 1.5 Unit V V MHz pF V V V V µs µs µs Cob V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE=∞ V(BR)EBO IE=1mA, IC=0 VCEX(sus) IC=4A, I […]

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C4429 Datasheet

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