Part Number : C4793
Function : 2SC4793
Manufactures : Toshiba Semiconductor
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Description :
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications 2SC4793 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1837 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 230 V 230 V 5V 1A 0.1 A 2.0 W 20 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE fT Cob VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 10 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Marking 2SC4793 Min Typ. Max Unit ― ― 1.0 μA ― ― 1.0 μA 230 ― ― V 100 ― 320 ― ― 1.5 V ― ― 1.0 V ― 100 ― MHz ― 20 ― pF C4793 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 Collector current IC (A) IC – VCE 1.0 20 10 8 0.8 6 0.6 4 0.4 IB = 2 mA 0.2 Common emitter Tc = 25°C 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) 1000 500 300 VCE (sat) – IC Common emitter VCE = 5 V Tc = 100°C 100 −25 50 25 30 10 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 3 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC (A) 2SC4793 IC – VBE 1.0 0.8 0.6 Tc = 100°C 25 −25 0.4 0.2 Common emitter VCE = 5 V 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) VCE (sat) – IC 1 Common emitter 0.5 IC/IB = 10 0.3 Tc = 100°C −25 0.1 0.05 0.03 25 0.01 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1 3 DC current gain hFE Transition frequency fT (MHz) fT – IC 500 300 Common emitter VCE = 10 V Tc = 25°C 100 50 30 10 5 10 30 100 300 Collector current IC (mA) 1000 Collector current IC (A) Safe Operating Area 5 […]
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